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Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators

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Helical ribbons for molecular electronics.

Yu Zhong¹, Bharat Kumar, Seokjoon Oh

¹Department of Chemistry, Optoelectronic Nano Materials and Devices Institute, Shanghai Normal University , Shanghai, China.

Journal of the American Chemical Society

|May 21, 2014

Summary

This summary is machine-generated.

Researchers developed novel helical graphene ribbons from perylenediimide (PDI) subunits. These PDI oligomers function as active layers in n-type field effect transistors, showing unique electronic properties.

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Area of Science:

Organic electronics
Materials science
Supramolecular chemistry

Background:

Graphene ribbons offer tunable electronic properties.
Perylenediimide (PDI) derivatives are widely used in organic electronics.
Controlling molecular architecture is key to optimizing material performance.

Purpose of the Study:

To design and synthesize a new graphene ribbon architecture based on perylenediimide (PDI) subunits.
To investigate the self-assembly and electronic properties of PDI oligomers.
To explore their potential application in n-type field effect transistors.

Main Methods:

Synthesis of PDI dimer, trimer, and tetramer oligomers.
Characterization using UV-vis spectroscopy and DFT calculations.
Device fabrication and testing of thin films in n-type field effect transistors.
Femtosecond transient absorption spectroscopy to probe electronic transitions.

Main Results:

Helical junctions and ribbons were formed due to steric congestion between PDI units.
An intense long-wavelength transition emerged in the tetramer, confirmed by DFT calculations.
The HOMO-2 to LUMO transition was found to electronically link PDI subunits and ethylene bridges.
Oligomer length was shown to influence the energy of this transition.

Conclusions:

The synthesized PDI oligomers form helical ribbons with potential for organic electronics.
The electronic coupling between PDI units and bridging ethylene is tunable with oligomer length.
These materials show promise for applications in n-type field effect transistors.