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Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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Effect of In/Al ratios on structural and optical properties of InAlN films grown on Si(100) by RF-MOMBE

Wei-Chun Chen1, Yue-Han Wu2, Chun-Yen Peng2

  • 1Instrument Technology Research Center, National Applied Research Laboratories, 20 R&D Rd. VI, Hsinchu Science Park, Hsinchu 30076, Taiwan.

Nanoscale Research Letters
|May 24, 2014
PubMed

Keywords:
In/Al ratiosInAlNRF-MOMBE

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