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Updated: Apr 29, 2026
Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
Published on: November 24, 2016
Effect of In/Al ratios on structural and optical properties of InAlN films grown on Si(100) by RF-MOMBE
Wei-Chun Chen1, Yue-Han Wu2, Chun-Yen Peng2
1Instrument Technology Research Center, National Applied Research Laboratories, 20 R&D Rd. VI, Hsinchu Science Park, Hsinchu 30076, Taiwan.
Abstract:
In x Al1-x N films were deposited on Si(100) substrate using metal-organic molecular beam epitaxy. We investigated the effect of the trimethylindium/trimethylaluminum (TMIn/TMAl) flow ratios on the structural, morphological, and optical properties of In x Al1-x N films. Surface morphologies and microstructure of the In x Al1-x N films were measured by atomic force microscopy, scanning electron microscopy, X-ray diffraction (XRD), and transmission electron microscopy (TEM), respectively. Optical properties of all films were evaluated using an ultraviolet/visible/infrared (UV/Vis/IR) reflection spectrophotometer. XRD and TEM results indicated that In x Al1-x N films were preferentially oriented in the c-axis direction. Besides, the growth rates of In x Al1-x N films were measured at around 0.6 μm/h in average. Reflection spectrum shows that the optical absorption of the In x Al1-x N films redshifts with an increase in the In composition.
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