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Updated: Apr 28, 2026

20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier
Published on: July 12, 2017
Development of a 33 kV, 20 A long pulse converter modulator for high average power klystron
T Reghu1, V Mandloi1, Purushottam Shrivastava1
1Pulsed High Power Microwave Section, Raja Ramanna Centre for Advanced Technology, Indore 452013, M.P., India.
Abstract:
Research, design, and development of high average power, long pulse modulators for the proposed Indian Spallation Neutron Source are underway at Raja Ramanna Centre for Advanced Technology. With this objective, a prototype of long pulse modulator capable of delivering 33 kV, 20 A at 5 Hz repetition rate has been designed and developed. Three Insulated Gate Bipolar Transistors (IGBT) based switching modules driving high frequency, high voltage transformers have been used to generate high voltage output. The IGBT based switching modules are shifted in phase by 120° with respect to each other. The switching frequency is 25 kHz. Pulses of 1.6 ms pulse width, 80 μs rise time, and 70 μs fall time have been achieved at the modulator output. A droop of ±0.6% is achieved using a simple segmented digital droop correction technique. The total fault energy transferred to the load during fault has been measured by conducting wire burn tests and is found to be within 3.5 J.
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