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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
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Resistive switching and its suppression in Pt/Nb:SrTiO3 junctions
Evgeny Mikheev1, Brian D Hoskins2, Dmitri B Strukov3
1Materials Department, University of California, Santa Barbara, California 93106, USA.
Nature Communications
|June 3, 2014
Summary
An unintentional interface layer causes resistive switching in oxide devices. Optimizing this interface layer is key to developing reliable resistive switching memory and computing technologies.
Area of Science:
- Materials Science
- Solid State Physics
- Device Engineering
Background:
- Oxide-based resistive switching devices show promise for advanced memory and computing.
- A lack of understanding regarding defect mechanisms hinders the development of reliable devices.
Purpose of the Study:
- To identify the origin of resistive switching in platinum/niobium-doped strontium titanate (Pt/Nb:SrTiO3) junctions.
- To elucidate the microscopic mechanisms controlling resistive switching.
- To demonstrate a method for improving device reliability.
Main Methods:
- Fabrication and characterization of Pt/Nb:SrTiO3 junctions.
- Interface analysis to identify the resistive switching origin.
- Microscopic mechanism investigation.
Main Results:
- An unintentional interface layer was identified as the source of resistive switching.
- The interface layer's role in controlling switching behavior was clarified.
- Interface processing was shown to effectively eliminate this contribution.
Conclusions:
- The unintentional interface layer is the primary cause of resistive switching in these devices.
- Controlling interface properties is crucial for engineering reliable resistive switching devices.
- These findings pave the way for more robust memory and computing solutions.
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