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Magnetic quantum ratchet effect in Si-MOSFETs.

S D Ganichev, S A Tarasenko, J Karch

    Journal of Physics. Condensed Matter : an Institute of Physics Journal
    |June 4, 2014
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    We observed the magnetic quantum ratchet effect in silicon metal-oxide semiconductor field-effect-transistors (Si-MOSFETs). An AC electric field from terahertz radiation induces a direct current under an in-plane magnetic field.

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    Area of Science:

    • Solid State Physics
    • Quantum Mechanics
    • Materials Science

    Background:

    • Metal-oxide semiconductor field-effect-transistors (MOSFETs) are fundamental semiconductor devices.
    • The quantum ratchet effect describes particle motion driven by asymmetric potentials and fluctuating forces.
    • Understanding carrier dynamics in MOSFETs under external fields is crucial for device applications.

    Purpose of the Study:

    • To report the first observation of the magnetic quantum ratchet effect in Si-MOSFETs.
    • To investigate the dependence of the induced current on magnetic field strength and AC electric field amplitude.
    • To elucidate the underlying physical mechanisms, including quasi-classical and quantum theories.

    Main Methods:

    • Fabrication and characterization of Si-MOSFETs.
    • Excitation of unbiased transistors using terahertz radiation with controlled polarization.
    • Application of in-plane magnetic fields.
    • Measurement of induced direct current between source and drain contacts.

    Main Results:

    • Observation of a direct electric current in Si-MOSFETs under terahertz AC electric field and in-plane magnetic field.
    • The induced current scales linearly with magnetic field strength and quadratically with AC electric field amplitude.
    • The effect is dependent on the polarization of the terahertz radiation and observable with both linear and circular polarization.

    Conclusions:

    • The magnetic quantum ratchet effect is experimentally demonstrated in Si-MOSFETs.
    • The observed current is attributed to the Lorentz force acting on carriers within the asymmetric inversion channels.
    • This finding opens new avenues for exploring quantum phenomena and developing novel electronic devices.