Polymer ferroelectric field-effect memory device with SnO channel layer exhibits record hole mobility

Area of Science:

• Materials Science
• Electronics Engineering
• Solid-State Physics

Background:

• Polymer ferroelectric field-effect transistors (PFFETs) are promising for non-volatile memory applications.
• Developing high-performance PFFETs with p-type channels remains a challenge.
• Transparent and flexible electronic devices require novel memory solutions.

Purpose of the Study:

• To report the first hybrid p-channel polymer ferroelectric field-effect transistor memory device.
• To achieve record charge carrier mobility in such devices.
• To explore their potential for transparent and flexible electronics.

Main Methods:

• Fabrication of a hybrid device using a ferroelectric polymer P(VDF-TrFE) gate dielectric and a transparent p-type tin monoxide (SnO) active channel layer.
• Device fabrication was performed at 200°C on both plastic polyimide and glass substrates.
• Characterization of electrical properties including mobility, memory window, read voltages, and retention.

Main Results:

• Achieved a record charge carrier mobility of 3.3 cm(2)V(-1)s(-1), over 10 times higher than previous p-type channel PFFETs.
• Demonstrated a large memory window of approximately 16 V and low read voltages of around -1 V.
• Exhibited excellent data retention characteristics for up to 5000 seconds.

Conclusions:

• The developed hybrid p-channel polymer ferroelectric field-effect transistor memory device exhibits superior performance.
• This work paves the way for high-performance non-volatile memory in flexible and transparent electronic applications.
• The dual-channel approach offers a new direction for next-generation electronic devices.