CdSe/ZnS quantum dot thin film formation by an electrospray deposition process for light-emitting devices
My Duyen Ho1, Namhun Kim, Daekyoung Kim
1School of Chemical Engineering, Sungkyunkwan University, Suwon, 440-746, South Korea.
Small (Weinheim an Der Bergstrasse, Germany)
|June 11, 2014
Abstract:
About 30 nm quantum-dot thin films are formed by electrospray deposition (ESD) process and quantum-dot-light-emitting-diodes (QD-LEDs) are demonstrated. Maximum brightness of 23 000 cd m(-2) and current efficiency of 5.9 cd A(-1) are achieved with the ESD process. The ESD process can be a potential solution for large area quantum dot layers with simple and flexible control.
