A low-power, high-speed, 9-channel germanium-silicon electro-absorption modulator array integrated with digital CMOS...

Area of Science:

• Photonics
• Integrated Optics
• Semiconductor Devices

Background:

• Optical communication systems require efficient and high-speed modulators.
• Integration of modulators with driver circuits is crucial for compact and scalable photonic systems.
• Silicon photonics offers a platform for miniaturizing optical components.

Purpose of the Study:

• To demonstrate the first integrated silicon germanium (SiGe) C-band electro-absorption modulator array.
• To integrate this array with an echelle-grating-based silicon wavelength multiplexer and a digital CMOS driver circuit.
• To evaluate the performance and energy efficiency of the integrated system.

Main Methods:

• Fabrication of a SiGe electro-absorption waveguide modulator array.
• Integration with a silicon wavelength multiplexer and 40nm CMOS driver circuits.
• High-speed modulation and power consumption measurements.

Main Results:

• Demonstrated a 9-channel, 10Gbps SiGe modulator array operating at 10.25Gbps.
• Achieved a low power consumption of 5.8mW per channel.
• Reported a modulation energy efficiency of approximately 570fJ/bit, including drivers.
• Showcased single-channel performance up to 25Gbps.

Conclusions:

• The integrated SiGe modulator array with CMOS drivers represents a significant advancement in photonic integrated circuits.
• The demonstrated technology offers high energy efficiency and high-speed operation for optical communication.
• This work paves the way for next-generation, compact, and power-efficient optical transceivers.