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Construction and Characterization of External Cavity Diode Lasers for Atomic Physics
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A 23-watt single-frequency vertical-external-cavity surface-emitting laser.

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    Summary

    This study presents a high-power, single-frequency semiconductor disk laser achieving 23.6 W output power at 1013 nm. Optimized design and passive stabilization yield a narrow linewidth, crucial for advanced applications.

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    Area of Science:

    • Optics and Photonics
    • Semiconductor Lasers

    Background:

    • Semiconductor disk lasers (SDLs) are crucial for high-power laser generation.
    • Achieving high output power and narrow linewidth simultaneously remains a challenge.

    Purpose of the Study:

    • To report a single-frequency semiconductor disk laser with high output power.
    • To investigate methods for enhancing laser performance through design optimization and stabilization.

    Main Methods:

    • Optimization of chip design, thermal management, and cavity configuration.
    • Application of passive stabilization techniques.
    • Characterization of output power, wavelength, and spectral linewidth.

    Main Results:

    • Generation of 23.6 W continuous wave output power at 1013 nm.
    • A free-running linewidth of 407 kHz (1 ms sampling time).
    • Linewidth reduction below 100 kHz in the microsecond domain.

    Conclusions:

    • The developed semiconductor disk laser demonstrates a significant advancement in high-power, narrow-linewidth laser technology.
    • The optimization strategies are effective for improving SDL performance.
    • This laser is suitable for applications requiring high optical power and spectral purity.