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Updated: Apr 28, 2026

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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Highly reliable Ti-based ohmic contact to N-polar n-type GaN for vertical-geometry light-emitting diodes by using a

Jae-Seong Park, Jaecheon Han, Tae-Yeon Seong

    Optics Express
    |June 13, 2014
    PubMed

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