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Plasma processing for crystallization and densification of atomic layer deposition BaTiO3 thin films
Jihwan An1, Takane Usui, Manca Logar
1Department of Mechanical Engineering, ‡Department of Materials Science and Engineering, and §Department of Applied Physics, Stanford University , Stanford, California 94305, United States.
ACS Applied Materials & Interfaces
|June 20, 2014
Summary
Post-deposition remote oxygen plasma treatment significantly enhances barium titanate (BaTiO3) thin films for dynamic random access memory (DRAM) capacitors. This method boosts dielectric constant and reduces leakage current at low temperatures.
Area of Science:
- Materials Science
- Thin Film Technology
- Semiconductor Devices
Background:
- High-k, low leakage thin films are essential for advanced dynamic random access memory (DRAM) capacitors.
- Achieving high storage density and long operational lifetime requires optimized dielectric materials.
- Current fabrication methods often involve high process temperatures, limiting compatibility.
Purpose of the Study:
- To develop a low-temperature method for enhancing barium titanate (BaTiO3) thin films.
- To improve the dielectric constant and reduce leakage current density of BaTiO3 films.
- To assess the impact of postdeposition remote oxygen plasma treatment on BaTiO3 film properties.
Main Methods:
- Atomic layer deposition (ALD) of BaTiO3 thin films at 250 °C.
- Postdeposition treatment using remote oxygen plasma.
- Characterization of dielectric properties and leakage current density.
Main Results:
- Dielectric constant of BaTiO3 films increased from 51 (as-deposited) to 122 (plasma-treated).
- Leakage current density decreased by one order of magnitude after plasma treatment.
- Improvements attributed to plasma-induced crystallization and densification.
Conclusions:
- Remote oxygen plasma treatment is an effective low-temperature method to enhance BaTiO3 thin films.
- The enhanced films are suitable for high-performance DRAM capacitor applications.
- This plasma-induced crystallization offers a simple, industrially compatible process for DRAM manufacturing.
