Polarized photocurrent response in black phosphorus field-effect transistors
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Updated: Apr 27, 2026

Exfoliation and Analysis of Large-area, Air-Sensitive Two-Dimensional Materials
Published on: January 5, 2019
Tu Hong1, Bhim Chamlagain, Wenzhi Lin
1Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN 37235, USA. yaqiong.xu@vanderbilt.edu.
Abstract:
We investigate electrical transport and optoelectronic properties of field effect transistors (FETs) made from few-layer black phosphorus (BP) crystals down to a few nanometers. In particular, we explore the anisotropic nature and photocurrent generation mechanisms in BP FETs through spatial-, polarization-, gate-, and bias-dependent photocurrent measurements. Our results reveal that the photocurrent signals at BP-electrode junctions are mainly attributed to the photovoltaic effect in the off-state and photothermoelectric effect in the on-state, and their anisotropic feature primarily results from the directional-dependent absorption of BP crystals.
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