Related Experiment Video
Updated: Jul 14, 2026

Characterization of Electrode Materials for Lithium Ion and Sodium Ion Batteries Using Synchrotron Radiation Techniques
Published on: November 11, 2013
d-Band Engineering of Layered (Fe1-xNix)3GaTe2 for Enhanced Alkaline Hydrogen Evolution by Ni-Substitutional Doping
Xiaomin Tian1, Yuan Cao1, Huilin Zhou1
1School of Physics and Information Technology, Shaanxi Normal University, Xi'an 710062, China.
Abstract:
Tuning the d-band electronic structure of non-noble-metal catalysts is a central strategy for an alkaline hydrogen evolution reaction (HER), yet how composition controls the d orbital in multi-Wyckoff-site layered systems remains insufficiently understood. Here, layered (Fe1-xNix)3GaTe2 single crystals (x = 0.2-1.0) were synthesized by the self-flux method as a platform to address this question. Single-crystal XRD and EDS confirm that Ni is uniformly incorporated into the parent P63/mmc framework while inducing a composition-dependent lattice evolution. Electrochemical measurements in 1.0 M KOH reveal a clear volcano-shaped composition dependence, peaking at x = 0.6, where the lowest overpotential, the smallest Tafel slope (94 mV dec-1), the lowest charge-transfer resistance and the largest double-layer capacitance are simultaneously reached. First-principles calculations show that Ni doping reshapes the Fe-site d orbital strongly composition-dependent rate: the Fe d-band center upshifts rapidly by ~0.5 eV between x = 0.4 and x = 0.6, while the Ni d-band center stays nearly fixed in the same composition range. The maximum of HER activity therefore aligns with a steep upshift of the Fe d-band center rather than with the Ni content itself. Charge-density mapping of (Fe0.4Ni0.6)3GaTe2 further demonstrates that the electron-enriched regions are located on the Fe and interlayer Ni3 sublattices that dominate the d states near EF.
More Related Videos
Related Concept Videos
Types of Semiconductors
Energy Bands in Solids
Band Formation:
When atoms are brought close together, as in a solid, these discrete energy levels begin to split due to the overlap of electron orbitals from adjacent atoms. This split occurs because of the Pauli exclusion principle, which states that no two...
Fermi Level
At absolute zero temperature, electrons fill all energy states up to the Fermi level, leaving upper states empty. As the temperature rises,...
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...

