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Photoelastic coupling in gallium arsenide optomechanical disk resonators
Optics Express
|July 1, 2014
Summary
Electrostrictive stress is key in GaAs semiconductor resonators, significantly impacting light-matter interactions. Photoelastic coupling, driven by strain-induced refractive index changes, is a dominant mechanism for specific disk designs and mechanical modes.
Area of Science:
- Optomechanics
- Semiconductor physics
- Photonics
Background:
- Semiconductor WGM optomechanical disk resonators are crucial for light confinement.
- Understanding light-induced stresses is vital for device performance.
Purpose of the Study:
- To analyze radiation pressure and electrostrictive stresses in GaAs resonators.
- To investigate geometric and photoelastic optomechanical coupling mechanisms.
- To identify methods for maximizing photoelastic coupling.
Main Methods:
- Analytical and numerical analysis of light-induced stresses.
- Investigation of mechanical modes in GaAs disk resonators.
- Characterization of geometric and photoelastic coupling.
Main Results:
- Electrostrictive stress is identified as the primary stress contributor.
- Photoelastic optomechanical coupling is predominant for specific disk dimensions and mechanical modes.
- Total coupling values reached 3 THz/nm (gom) and 4 MHz (g(0)).
Conclusions:
- Electrostrictive stress and photoelastic coupling are critical in GaAs resonators.
- Optimizing disk geometry and mechanical modes can enhance photoelastic coupling.
- Provides upper bounds for photoelastic coupling in various GaAs disk resonator geometries.
