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Related Experiment Video

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Two-dimensional photo-mapping on CMOS single-photon avalanche diodes.

Jau-Yang Wu, Ping-Keng Lu, Sheng-Di Lin

    Optics Express
    |July 1, 2014
    PubMed
    Summary

    Researchers mapped photo-response non-uniformity in CMOS single photon avalanche diodes (SPADs). This method helps improve SPAD device structure and photo-response by analyzing electric field distribution.

    Area of Science:

    • Photon detection and semiconductor device physics.

    Background:

    • Single photon avalanche diodes (SPADs) are crucial for low-light imaging.
    • Understanding photo-response uniformity is key to optimizing SPAD performance.

    Purpose of the Study:

    • To demonstrate two-dimensional (2-D) photo-count mapping on CMOS SPADs.
    • To investigate the depth-dependent electric field distribution and its effect on photo-response non-uniformity in different SPAD structures.

    Main Methods:

    • Utilized 2-D photo-count mapping with varied incident wavelengths.
    • Analyzed electric field distribution in the active region of two distinct SPAD structures.
    • Employed simulation tools to correlate electric field non-uniformity with photo-count variations.

    Main Results:

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  • Observed clear, structure-dependent non-uniformity in photo-response across the SPADs.
  • Successfully explained the origin of non-uniform photo-counts due to electric field variations.
  • Mapped the quasi-3D electric field distribution within the active region.

    • Conclusions:

    • The developed photo-count mapping technique effectively reveals electric field non-uniformity.
    • This method provides valuable insights for engineering SPAD structures to enhance photo-response.
    • The findings contribute to the advancement of high-performance SPAD devices.