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Ideal graphene/silicon Schottky junction diodes.
1College of Nanoscale Science and Engineering, The State University of New York , Albany, New York 12203, United States.
Nano Letters
|July 8, 2014
Summary
We explored graphene-silicon Schottky junctions, revealing a new transport model is needed. Graphene
Area of Science:
- Materials Science
- Condensed Matter Physics
- Electrical Engineering
Background:
- Understanding metal-semiconductor interfaces is crucial for semiconductor devices.
- Schottky junctions form at these interfaces, particularly with low semiconductor doping.
- Graphene, an atomically thin semimetal, offers novel properties for electronic applications.
Purpose of the Study:
- To analyze metal-silicon Schottky junctions using graphene as the metal contact.
- To investigate the transport properties of graphene-silicon Schottky junctions.
- To determine the underlying physics governing the behavior of these novel junctions.
Main Methods:
- Fabrication and characterization of graphene-silicon Schottky junctions.
- Measurement of current-voltage (I-V) characteristics.
- Application of the Landauer transport formalism for detailed analysis.
Main Results:
- Graphene-silicon Schottky junctions exhibit ideal diode behavior in their current-voltage characteristics.
- A new transport model is required to accurately describe these junctions.
- The Landauer transport formalism effectively characterizes the diode's detailed behavior.
Conclusions:
- The transport properties of graphene-silicon Schottky junctions are fundamentally governed by graphene's injection rate.
- This work introduces a novel Schottky junction with unique transport characteristics.
- Further research into graphene-based interfaces can lead to advanced semiconductor devices.
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