Efficient quantum dot light-emitting diodes by controlling the carrier accumulation and exciton formation
Wenyu Ji1, Ye Tian, Qinghui Zeng
1State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences , Changchun 130033, China.
Abstract:
The performances and spectroscopic properties of CdSe/ZnS quantum dot light-emitting diodes (QD-LEDs) with inserting a thickness-varied 1,3,5-tris(N-phenylbenzimidazole-2-yl)benzene (TPBi) layer between the QD emission layer and 4,4-N,N-dicarbazole-biphenyl (CBP) hole transport layer (HTL) are studied. The significant enhancement in device peak efficiency is demonstrated for the device with a 3.5 nm TPBi interlayer. The photoluminescence lifetimes of excitons formed within QDs in different devices are also measured to understand the influence of electric field on the QD emission dynamics process and device efficiency. All the excitons on QDs at different devices have nearly the same lifetime even though at different bias. The improvement of device performance is attributed to the separation of charge carrier accumulation interface from the exciton formation zone, which suppresses exciton quenching caused by accumulated carriers.
Related Concept Videos
Carrier Generation and Recombination
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
Carrier Transport
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
P-N junction


