Related Experiment Video
Updated: Apr 26, 2026
A Method for Growing Bio-memristors from Slime Mold
Published on: November 2, 2017
Study of multi-level characteristics for 3D vertical resistive switching memory
Yue Bai1, Huaqiang Wu2, Riga Wu3
1Institute of Microelectronics, Tsinghua University, Beijing, China, 100084.
Abstract:
Three-dimensional (3D) integration and multi-level cell (MLC) are two attractive technologies to achieve ultra-high density for mass storage applications. In this work, a three-layer 3D vertical AlOδ/Ta2O5-x/TaOy resistive random access memories were fabricated and characterized. The vertical cells in three layers show good uniformity and high performance (e.g. >1000X HRS/LRS windows, >10(10) endurance cycles, >10(4) s retention times at 125°C). Meanwhile, four level MLC is demonstrated with two operation strategies, current controlled scheme (CCS) and voltage controlled scheme (VCS). The switching mechanism of 3D vertical RRAM cells is studied based on temperature-dependent transport characteristics. Furthermore, the applicability of CCS and VCS in 3D vertical RRAM array is compared using resistor network circuit simulation.
Related Concept Videos
01:25MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
01:14Design Example: Resistive Touchscreen
When a user touches the screen, the two layers make contact at a specific point known as the touchpoint. This contact reduces the resistance between...
01:17Characteristics of MOSFET
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...