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Updated: Apr 26, 2026

A Method to Manipulate Surface Tension of a Liquid Metal via Surface Oxidation and Reduction
Published on: January 26, 2016
Physical origins and suppression of Ag dissolution in GeS(x)-based ECM cells
Jan van den Hurk1, Ann-Christin Dippel, Deok-Yong Cho
1Institut für Werkstoffe der Elektrotechnik II (IWE II) & JARA-FIT, RWTH Aachen University, Sommerfeldstr. 24, 52074 Aachen, Germany.
Abstract:
Electrochemical metallisation (ECM) memory cells potentially suffer from limited memory retention time, which slows down the future commercialisation of this type of data memory. In this work, we investigate Ag/GeSx/Pt redox-based resistive memory cells (ReRAM) with and without an additional Ta barrier layer by time-of-flight secondary ion mass spectrometry (ToF-SIMS), X-ray absorption spectroscopy (XAS) and synchrotron high-energy X-ray diffractometry (XRD) to investigate the physical mechanism behind the shift and/or loss of OFF data retention. Electrical measurements demonstrate the effectiveness and high potential of the diffusion barrier layer in practical applications.
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