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Related Experiment Video

Updated: Apr 26, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

Graphene-supported tunable extraordinary transmission.

Xiaoyong He¹, Hongxia Lu

¹Mathematics & Science College, Shanghai Normal University, No. 100 Guilin Rd., Shanghai, 200234, People's Republic of China.

|July 26, 2014

Summary

This study explores tunable terahertz and near-infrared transmission in metal-dielectrics-graphene structures. Varying graphene

Area of Science:

Physics
Materials Science
Nanotechnology

Background:

Extraordinary optical transmission (EOT) through subwavelength hole arrays is a key phenomenon.
Graphene's unique electronic properties offer potential for tunable optical devices.

Purpose of the Study:

Investigate tunable EOT in metal-dielectrics-graphene (MDG) structures.
Analyze the influence of graphene's Fermi level on THz and NIR transmission.
Understand the distinct tuning mechanisms in THz and NIR regimes.

Main Methods:

Fabrication of MDG structures with graphene on metallic films.
Numerical simulations and experimental investigations in THz and NIR regimes.
Systematic analysis of varying Fermi levels, operating frequencies, and material compositions.

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Main Results:

Achieved wide-range tunability of transmission by adjusting graphene's Fermi level.
Demonstrated over 50% modulation depth in peak transmission.
Identified different tuning mechanisms for THz (graphene as dielectric) and NIR (graphene as metallic) regimes.
Showcased broader tunability and modulation via doping or temperature in semiconductor structures.

Conclusions:

Graphene's Fermi level is a crucial parameter for tuning EOT in MDG structures.
The distinct THz and NIR mechanisms provide pathways for novel device designs.
Results offer insights for developing advanced plasmonic devices like filters, modulators, and sensors.