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Direct observation of doping sites in temperature-controlled, p-doped P3HT thin films by conducting atomic force
Duc T Duong1, Hung Phan, David Hanifi
1Department of Materials Science and Engineering, Stanford University, Stanford, California, 94305, USA.
Advanced Materials (Deerfield Beach, Fla.)
|July 26, 2014
Abstract:
The distribution of dopant sites in doped poly(3-hexylthiophene) (P3HT) thin films is characterized using optical absorption, grazing-incidence X-ray diffraction, and conducting atomic force microscopy (c-AFM). It is shown that dopant sites can be directly observed using c-AFM and that the solution temperature dramatically impacts phase separation and conductivity in spin-cast films.
