Related Experiment Video

Updated: Apr 25, 2026

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
12:57

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

Published on: October 13, 2017

8.3K

Stochastic resonance in collective exciton-polariton excitations inside a GaAs microcavity

H Abbaspour1, S Trebaol1, F Morier-Genoud1

  • 1Laboratory of Quantum Optoelectronics, École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland.

Physical Review Letters
|August 16, 2014
PubMed

More Related Videos

Stimulated Stokes and Antistokes Raman Scattering in Microspherical Whispering Gallery Mode Resonators12:21

Stimulated Stokes and Antistokes Raman Scattering in Microspherical Whispering Gallery Mode Resonators

Published on: April 4, 2016

10.7K
Measurement of Coherence Decay in GaMnAs Using Femtosecond Four-wave Mixing15:58

Measurement of Coherence Decay in GaMnAs Using Femtosecond Four-wave Mixing

Published on: December 3, 2013

8.5K

Related Concept Videos

Standing Waves in a Cavity01:28

Standing Waves in a Cavity

A household microwave and lasers are examples of standing electromagnetic waves in a cavity. When two conducting metal plates are placed parallel at the nodal planes, it creates a cavity where standing waves are formed. The cavity between the two planes is analogous to a stretched string held at the points x = 0 and x = L. Here, the distance 'L' between the two planes must be an integer multiple of half of the wavelength. The wavelengths that satisfy this condition are given by:
1.7K
Carrier Generation and Recombination01:22

Carrier Generation and Recombination

Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
1.5K