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Persistent photoconductivity in strained epitaxial BiFeO3 thin films
Akash Bhatnagar1, Young Heon Kim, Dietrich Hesse
1Max Planck Institute of Microstructure Physics , Weinberg 2, 06120 Halle, Germany.
Nano Letters
|August 27, 2014
Summary
Strained bismuth ferrite (BiFeO3) films exhibit persistent photoconductivity when exposed to light. This enhanced conductivity, caused by light-induced trapped charges, gradually decays over time.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Solid-State Chemistry
Background:
- Bismuth ferrite (BiFeO3) is a multiferroic material with potential applications in electronic devices.
- Photoconductivity in thin films can be influenced by material strain and light exposure.
- Understanding charge carrier dynamics is crucial for optimizing material performance.
Purpose of the Study:
- To investigate the phenomenon of persistent photoconductivity in strained BiFeO3 films.
- To elucidate the underlying mechanisms responsible for the observed conductivity changes.
- To characterize the decay dynamics of light-induced conductivity.
Main Methods:
- Fabrication of strained BiFeO3 thin films.
- Optical characterization using above-band gap light illumination.
- Electrical conductivity measurements over time.
- Analysis of conductivity decay kinetics.
Main Results:
- A significant and persistent increase in electrical conductivity was observed in strained BiFeO3 films upon illumination.
- The enhanced conductivity exhibited an exponential decay over time.
- The results suggest the presence of sub-band energy levels acting as charge traps.
Conclusions:
- Strained BiFeO3 films display persistent photoconductivity, a phenomenon attributed to light-induced charge trapping.
- The gradual emptying of these trapped charges governs the decay of enhanced conductivity.
- This study provides insights into the charge dynamics of BiFeO3, relevant for optoelectronic applications.
