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Related Concept Videos

Photoluminescence: Applications01:14

Photoluminescence: Applications

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Photoluminescence offers a wide range of applications due to its inherent sensitivity and selectivity. This technique allows for both direct and indirect analyses of the analyte. Direct quantitative analysis is possible when the analyte exhibits a favorable quantum yield for fluorescence or phosphorescence. However, an indirect analysis may be feasible if the analyte is not fluorescent or phosphorescent, or if the quantum yield is unfavorable. Indirect methods include reacting the analyte with...
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Metal-Semiconductor Junctions01:24

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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
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Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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Related Experiment Video

Updated: Jan 14, 2026

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Surface-Oxidized Heterojunction In2O3/InN Core-Shell Nanorods on V-Grooved Si(111) for Enhanced Self-Powered

Na-Hyun Bak1, Kedhareswara Sairam Pasupuleti2, Yun-Hae Shim1

  • 1Department of Physics, Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon 34134, Republic of Korea.

ACS Applied Materials & Interfaces
|January 13, 2026
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Summary
This summary is machine-generated.

This study introduces a novel self-powered near-infrared photodetector using In2O3/InN core-shell nanorods. The device achieves ultra-low dark current and high sensitivity, overcoming challenges in III-nitride photodetector technology.

Keywords:
In2O3/InN core−shell nanorodsV-grooved Si substratenear-infrared photodetectionphotoresponsivityself-powered photodetector

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Area of Science:

  • Materials Science
  • Optoelectronics
  • Semiconductor Physics

Background:

  • Self-powered (SP) near-infrared (NIR) photodetectors (PD) are crucial for night vision, optical communication, and biomedical sensing.
  • Achieving high sensitivity and low power consumption in III-nitride-based PDs is challenging due to material limitations and leakage currents.

Purpose of the Study:

  • To develop an advanced SP NIR PD with enhanced photoresponse and suppressed dark current.
  • To investigate the synergistic effects of surface engineering and substrate geometry on device performance.

Main Methods:

  • Fabrication of In2O3/InN core-shell nanorods on V-grooved Si substrates.
  • Integration of surface passivation at the heterointerface and optimized substrate geometry.
  • Characterization of photodetector performance under 940 nm illumination at zero bias.

Main Results:

  • Achieved the lowest reported dark current of 1.4 × 10^-11 A.
  • Demonstrated a light-to-dark current ratio exceeding 10^7.
  • Obtained a responsivity of 2.03 A/W, detectivity of 7.30 × 10^13 Jones, and external quantum efficiency of 2.68%.

Conclusions:

  • The synergistic effects of surface passivation, heterostructure design, and V-grooved substrate geometry significantly enhance SP NIR PD performance.
  • The developed device represents a significant advancement for next-generation self-powered photodetectors.