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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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Updated: Feb 17, 2026

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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Gate-Localized Fluorination Enables Enhancement-Mode AlGaN/GaN High-Electron Mobility Transistors.

Do Wan Kim1, Byungsoo Kim1, Yongjoo Cho2

  • 1Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, Virginia 22904, United States.

ACS Applied Electronic Materials
|February 16, 2026
PubMed
Summary
This summary is machine-generated.

A novel gate-localized CHF3 plasma process enables normally off Gallium Nitride (GaN)-based high-electron-mobility transistors (HEMTs). This method offers stable threshold voltage control and low gate leakage for efficient power electronics.

Keywords:
AlGaN/GaN HEMTsCHF3 plasma treatmentenhancement-mode operationgate recessthreshold voltage engineering

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Area of Science:

  • Materials Science
  • Semiconductor Device Physics

Background:

  • Gallium Nitride (GaN)-based High-Electron-Mobility Transistors (HEMTs) are crucial for high-power and high-frequency applications.
  • Enhancement-mode (E-mode) operation is desired for power switching due to failsafe behavior and reduced standby power.
  • Traditional E-mode fabrication methods present challenges like complexity, surface damage, and instability.

Purpose of the Study:

  • To develop a simplified and stable fabrication process for normally off AlGaN/GaN HEMTs.
  • To address the limitations of conventional E-mode enhancement strategies.

Main Methods:

  • A gate-localized CHF3 plasma process was employed.
  • This process created a self-limiting recess and a fluorine-terminated surface.
  • Plasma exposure was confined to the gate region to minimize surface degradation.

Main Results:

  • The process enabled normally off AlGaN/GaN HEMTs with a stable, positive shift in threshold voltage (Vth).
  • Fluorine incorporation compensated polarization charges, while hydrogen passivated defects.
  • Fabricated devices showed normally off operation with low gate leakage under bias stress.

Conclusions:

  • The gate-localized CHF3 plasma process provides a practical and stable route to E-mode GaN HEMTs.
  • This method avoids deep gate recessing, mitigating fabrication complexity and instability.
  • The developed approach is suitable for energy-efficient, high-frequency, and high-power electronic systems.