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Zero-Bias Photodetection and Opto-Synaptic Plasticity in BP/MoS2 and WS2/PdSe2 van der Waals Heterostructures
Ofelia Durante1, Loredana Viscardi1, Adolfo Mazzotti1
1Department of Physics "E. R. Caianiello", University of Salerno, via Giovanni Paolo II, Fisciano, Salerno 84084, Italy.
ACS Applied Electronic Materials
|April 20, 2026
Summary
Atomically thin van der Waals (vdW) heterostructures offer tunable optoelectronic properties. Researchers explored BP/MoS2 and WS2/PdSe2 platforms, demonstrating high performance and potential for sensing and synaptic plasticity.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Van der Waals (vdW) heterostructures enable engineering of interfaces for advanced optoelectronics.
- Band alignment and interlayer coupling are key for device functionality.
- Atomic thin crystals offer unique electronic and optical properties.
Purpose of the Study:
- To provide a critical overview of BP/MoS2 and WS2/PdSe2 heterostructures for optoelectronics.
- To highlight the role of band alignment in device performance.
- To examine synthesis, interfacial structure, and device behavior.
Main Methods:
- Fabrication and characterization of back-gate transistors based on BP/MoS2 and WS2/PdSe2 heterojunctions.
- Analysis of transfer curves, ON/OFF ratios, and hysteresis.
- Investigation of photoresponse, pressure-dependent transport, and opto-synaptic plasticity.
Main Results:
- Both heterojunctions exhibit high ON/OFF ratios (10^7-10^8) and reduced hysteresis in vacuum.
- BP/MoS2 shows type-II band offset enabling low-bias operation with fast photoresponse.
- WS2/PdSe2 demonstrates visible-band photodetection, optoelectronic pressure sensing, and opto-synaptic plasticity with high PPF and PTP values.
Conclusions:
- Engineered vdW heterostructures like BP/MoS2 and WS2/PdSe2 are promising for multifunctional, low-power optoelectronics.
- Tunable properties through pressure and stacking offer pathways for novel sensing and neuromorphic applications.
- Stability, uniformity, and readout compatibility are crucial for practical implementation of these devices.
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