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  1. Home
  3. Reversible Magneto-ionic Modification Of Metallic Magnetic Thin Films.
  1. Home
  3. Reversible Magneto-ionic Modification Of Metallic Magnetic Thin Films.

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Radio Frequency Magnetron Sputtering of GdBa2Cu3O7âˆ'ÃŽ ´/ La0.67Sr0.33MnO3 Quasi-bilayer Films on SrTiO3 STO Single-crystal Substrates
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Radio Frequency Magnetron Sputtering of GdBa2Cu3O7âˆ'ÃŽ ´/ La0.67Sr0.33MnO3 Quasi-bilayer Films on SrTiO3 STO Single-crystal Substrates

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Reversible Magneto-ionic Modification of Metallic Magnetic Thin Films.

Md Golam Hafiz1,2, Hari Babu Vasili1, Philippa Shepley1

  • 1School of Physics and Astronomy, University of Leeds, Leeds LS2 9JT, U.K.

ACS Applied Electronic Materials
|April 20, 2026

View abstract on PubMed

Summary
This summary is machine-generated.

Researchers demonstrate electrically controlled, reversible changes in magnetic properties of metallic multilayers using oxygen migration. This magneto-ionic modulation offers promising applications for field-programmable spintronic devices.

Keywords:
Dzyaloshinskii Moriya interactionIonic liquid gatingX-ray absorption spectroscopyX-ray magnetic circular dichroismX-ray photoelectron spectroscopyanomalous Hall effectmagnetic anisotropymagnetic moment

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Magnetic multilayers with perpendicular magnetic anisotropy (PMA) and Dzyaloshinskii-Moriya interaction (DMI) are crucial for spintronic data processing.
  • Existing methods for tuning these properties are often limited or non-reversible.

Purpose of the Study:

  • To investigate controlled, nonvolatile, and reversible local modification of magnetic properties in metallic multilayers.
  • To explore the use of electrically driven oxygen migration for tuning magnetic characteristics.

Main Methods:

  • Utilized ionic liquid gating to induce and control oxygen migration through a metallic film structure.
  • Applied varying gate voltages to alter the oxidation state at the heavy metal (HM)/ferromagnet (FM) interface.
  • Measured changes in fundamental magnetic properties, including effective anisotropy constant (Keff), coercive field (Hc), magnetic moment, and DMI.

    • Main Results:

    • Demonstrated direct evidence of oxidation state modification at the HM/FM interface via oxygen migration.
    • Observed reversible changes in Keff and Hc with oxidation (increase) and reduction (decrease).
    • Showed that positive gate voltages decrease domain nucleation field, while negative voltages increase domain wall pinning and decrease magnetic moment and DMI.

    Conclusions:

    • Magneto-ionic modulation in fully metallic structures provides a novel method for tuning magnetic properties.
    • This technique enables controlled, reversible, and nonvolatile modification of PMA and DMI.
    • The findings are highly beneficial for developing field-programmable domain wall and skyrmion-based spintronic devices.