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Updated: Apr 25, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Generation of pure bulk valley current in graphene
Yongjin Jiang1, Tony Low2, Kai Chang3
1Center for Statistical and Theoretical Condensed Matter Physics and Department of Physics, Zhejiang Normal University, Jinhua 321004, People's Republic of China and Beijing Computational Science Research Center, Beijing 100084, People's Republic of China.
Abstract:
The generation of valley current is a fundamental goal in graphene valleytronics but no practical ways of its realization are known yet. We propose a workable scheme for the generation of bulk valley current in a graphene mechanical resonator through adiabatic cyclic deformations of the strains and a chemical potential in the suspended region. The accompanied strain gauge fields can break the spatial mirror symmetry of the problem within each of the two inequivalent valleys, leading to a finite valley current due to quantum pumping. An all-electrical measurement configuration is designed to detect the novel state with pure bulk valley currents.
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