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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Proximity effects induced in graphene by magnetic insulators: first-principles calculations on spin filtering and
H X Yang1, A Hallal1, D Terrade1
1SPINTEC, CEA/CNRS/UJF-Grenoble 1/Grenoble-INP, INAC, 38054 Grenoble, France.
Abstract:
We report on first-principles calculations of spin-dependent properties in graphene induced by its interaction with a nearby magnetic insulator (europium oxide, EuO). The magnetic proximity effect results in spin polarization of graphene π orbitals by up to 24%, together with a large exchange-splitting band gap of about 36 meV. The position of the Dirac cone is further shown to depend strongly on the graphene-EuO interlayer. These findings point toward the possible engineering of spin gating by the proximity effect at a relatively high temperature, which stands as a hallmark for future all-spin information processing technologies.
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