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Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment
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Comment on "Refractive index of silicon at γ ray energies"
1Centre d'Etudes Nucléaires de Bordeaux-Gradignan, Université Bordeaux 1, CNRS/IN2P3, BP 120, 33175 Gradignan, France.
Physical Review Letters
|August 29, 2014
Abstract:
A Comment on the Letter by Habs et al., Phys. Rev. Lett. 108, 184802 (2012).
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