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Back gated multilayer InSe transistors with enhanced carrier mobilities via the suppression of carrier scattering

Wei Feng1, Wei Zheng, Wenwu Cao

  • 1State Key Laboratory of Robotics and System, Harbin Institute of Technology, Harbin, 150080, China; School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150080, China.

Advanced Materials (Deerfield Beach, Fla.)
|August 30, 2014
PubMed

Keywords:
carrier scatterfield-effect transistorindium selenidemobilitytwo dimensional layer semiconductor

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