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Updated: Apr 24, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Metal-insulator transition in graphene on boron nitride
1Radboud University Nijmegen, Institute for Molecules and Materials, NL-6525 AJ Nijmegen, The Netherlands.
Abstract:
Electrons in graphene aligned with hexagonal boron nitride are modeled by Dirac fermions in a correlated random-mass landscape subject to a scalar- and vector-potential disorder. We find that the system is insulating in the commensurate phase since the average mass deviates from zero. At the transition the mean mass is vanishing and electronic conduction in a finite sample can be described by a critical percolation along zero-mass lines. In this case graphene at the Dirac point is in a critical state with the conductivity sqrt[3]e(2)/h. In the incommensurate phase the system behaves as a symplectic metal.
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