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Fabrication of Three-Dimensional Graphene-Based Polyhedrons via Origami-Like Self-Folding
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Doping graphene with an atomically thin two dimensional molecular layer.

Haena Kim1, Hyun Ho Kim, Jeong In Jang

  • 1Department of Chemical Engineering, Polymer Research Institute, Pohang University of Science and Technology, Pohang, 790-784, Republic of Korea.

Advanced Materials (Deerfield Beach, Fla.)
|September 23, 2014
PubMed
Summary
This summary is machine-generated.

Chemically versatile graphene oxide (GO) sheets enable stable, large-scale p-doping of chemical vapor deposition-graphene (CVD-graphene). This low-temperature method preserves graphene

Keywords:
field effect transistorgraphenegraphene oxidemolecular dopingtransparent conductive electrodes

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Condensed Matter Physics

Background:

  • Chemical vapor deposition-graphene (CVD-graphene) is a promising material for electronics.
  • Achieving stable and controllable p-doping in graphene is crucial for device applications.
  • Graphene oxide (GO) possesses unique chemical properties for material functionalization.

Purpose of the Study:

  • To investigate the use of graphene oxide (GO) sheets as p-type dopants for CVD-graphene.
  • To develop a scalable, low-temperature doping method for graphene.
  • To assess the impact of GO doping on graphene's electrical and physical properties.

Main Methods:

  • Atomically thin graphene oxide (GO) sheets were employed as p-type dopants.
  • The doping process was applied to chemical vapor deposition-grown graphene (CVD-graphene).
  • Characterization focused on charge mobility, surface roughness, and optical transmittance.

Main Results:

  • GO sheets effectively served as p-type dopants for CVD-graphene.
  • The doping method proved to be strong, stable, large-scale, and low-temperature.
  • Key graphene properties, including charge mobility, intrinsic roughness, and transmittance, were preserved.

Conclusions:

  • Graphene oxide is a viable and effective p-type dopant for CVD-graphene.
  • This doping strategy offers a scalable and low-temperature solution for graphene functionalization.
  • The method maintains the intrinsic quality of graphene, enabling advanced electronic applications.