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Updated: Apr 23, 2026

Negative Additive Manufacturing of Complex Shaped Boron Carbides
Published on: September 18, 2018
Dynamical conductivity of boron carbide: heavily damped plasma vibrations
Helmut Werheit1, Guido Gerlach
1Institute of Physics, University Duisburg-Essen, Campus Duisburg, D - 47048 Duisburg, Germany.
Abstract:
The FIR reflectivity spectra of boron carbide, measured down to ω~10 cm(-1) between 100 and 800 K, are essentially determined by heavily damped plasma vibrations. The spectra are fitted applying the classical Drude-Lorentz theory of free carriers. The fitting Parameter Π=ωp/ωτ yields the carrier densities, which are immediately correlated with the concentration of structural defects in the homogeneity range. This correlation is proved for band-type and hopping conductivity. The effective mass of free holes in the valence band is estimated at m*/me~2.5. The mean free path of the free holes has the order of the cell parameters.
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