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Updated: Apr 22, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Nanosecond spin lifetimes in single- and few-layer graphene-hBN heterostructures at room temperature
Marc Drögeler1, Frank Volmer, Maik Wolter
12nd Institute of Physics and JARA-FIT, RWTH Aachen University , 52074 Aachen, Germany.
Abstract:
We present a new fabrication method of graphene spin-valve devices that yields enhanced spin and charge transport properties by improving both the electrode-to-graphene and graphene-to-substrate interface. First, we prepare Co/MgO spin injection electrodes onto Si(++)/SiO2. Thereafter, we mechanically transfer a graphene-hBN heterostructure onto the prepatterned electrodes. We show that room temperature spin transport in single-, bi-, and trilayer graphene devices exhibit nanosecond spin lifetimes with spin diffusion lengths reaching 10 μm combined with carrier mobilities exceeding 20,000 cm(2)/(V s).
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