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Revisiting galvanomagnetic effects in conducting ferromagnets
R Walter1, M Viret, Surendra Singh
1Physics Department, University of Arkansas, Fayetteville, Arkansas 72701, USA. Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA.
Summary
A new coupling mechanism explains galvanomagnetic effects like anisotropic magnetoresistance (AMR) and planar Hall effect (PHE). This model also unifies these phenomena with the anomalous Hall effect (AHE).
Area of Science:
- Condensed matter physics
- Spintronics
- Solid-state physics
Background:
- Galvanomagnetic effects, including anisotropic magnetoresistance (AMR) and planar Hall effect (PHE), are crucial phenomena in spintronics.
- Existing explanations for these effects can be complex and varied.
Purpose of the Study:
- To propose a unified and straightforward theoretical framework for understanding galvanomagnetic effects.
- To demonstrate how a specific coupling mechanism can explain both AMR and PHE.
Main Methods:
- Theoretical modeling based on the coupling between angular momentum density and magnetic moments.
- Derivation of general formulas for AMR and PHE from the proposed coupling.
Main Results:
- The proposed coupling naturally reproduces the established formulas for AMR and PHE.
- The model accounts for the possibility of 'negative AMR'.
- This coupling provides a unifying link to the anomalous Hall effect (AHE), previously shown to arise from the same mechanism.
Conclusions:
- The coupling between angular momentum density and magnetic moments offers a simple, unified explanation for AMR, PHE, and AHE.
- This theoretical approach simplifies the understanding of key spintronic phenomena.
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