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Asymmetric programming: a highly reliable metadata allocation strategy for MLC NAND flash memory-based sensor

Min Huang¹, Zhaoqing Liu², Liyan Qiao³

¹Department of Automatic Test and Control, Harbin Institute of Technology, 3033#, Science Park of Harbin Institute of Technology, No.2, Yikuang Street, NanGang District, Harbin 150080, China. jimmyhuanghit@gmail.com.

Sensors (Basel, Switzerland)

|October 14, 2014

Summary

This summary is machine-generated.

This study introduces Asymmetric Programming, a new strategy for MLC NAND flash memory. It significantly enhances metadata reliability by storing critical data in more robust Most Significant Bit (MSB) pages, reducing errors by up to 99.05%.

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Area of Science:

Computer Science
Electrical Engineering
Data Storage

Background:

NAND flash memory reliability degrades with shrinking geometries and increased bits per cell.
Metadata is crucial for file systems and address translation but is vulnerable to damage.
Metadata corruption can lead to system crashes and data loss.

Purpose of the Study:

To propose a highly reliable metadata allocation strategy for Multi-Level Cell (MLC) NAND flash memory.
To enhance the reliability of critical metadata in storage systems.
To mitigate data loss and system instability caused by metadata errors.

Main Methods:

Developed Asymmetric Programming, a novel metadata allocation strategy for MLC NAND flash.
Exploited the multi-page architecture of MLC NAND flash memory.
Stored metadata in the more reliable Most Significant Bit (MSB) pages, distinct from Least Significant Bit (LSB) pages.
Proposed optimized address mapping and garbage collection strategies.

Main Results:

Asymmetric Programming significantly improves metadata reliability.
Achieved a reduction in page errors by up to 99.05% compared to baseline error correction.
Experimental validation on a real hardware platform confirmed the effectiveness of the proposed technique.

Conclusions:

Asymmetric Programming offers a robust solution for enhancing metadata reliability in MLC NAND flash memory.
The strategy effectively reduces bit error rates for critical metadata.
This approach is vital for maintaining data integrity and system stability in modern storage systems.