Ge-mediated modification in Ta3N5 photoelectrodes with enhanced charge transport for solar water splitting

Ta3 N5 is a promising photoanode candidate for photoelectrochemical water splitting, with a band gap of about 2.1 eV and a theoretical solar-to-hydrogen efficiency as high as 15.9 % under AM 1.5 G 100 mW cm(-2) irradiation. However, the presently achieved highest photocurrent (ca. 7.5 mA cm(-2) ) on Ta3 N5 photoelectrodes under AM 1.5 G 100 mW cm(-2) is far from the theoretical maximum (ca. 12.9 mA cm(-2) ), which is possibly due to serious bulk recombination (poor bulk charge transport and charge separation) in Ta3 N5 photoelectrodes. In this study, we show that volatilization of intentionally added Ge (5 %) during the synthesis of Ta3 N5 promotes the electron transport and thereby improves the charge-separation efficiency in bulk Ta3 N5 photoanode, which affords a 320 % increase of the highest photocurrent comparing with that of pure Ta3 N5 photoanode under AM 1.5 G 100 mW cm(-2) simulated sunlight.