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Size-dependent silicon epitaxy at mesoscale dimensions.

Jinkyoung Yoo1, Shadi A Dayeh, Norman C Bartelt

  • 1Center for Integrated Nanotechnologies, Los Alamos National Laboratory , Los Alamos, New Mexico 87545, United States.

Nano Letters
|October 16, 2014
PubMed
Summary

New research reveals that silicon epitaxial growth rates depend on size in the mesoscopic regime. This unexpected finding, driven by silane precursor desorption, offers new control for advanced semiconductor device fabrication.

Keywords:
Chemical Vapor DepositionEpitaxyMesoscaleNanowiresSilicon

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Area of Science:

  • Materials Science
  • Semiconductor Physics
  • Nanotechnology

Background:

  • Collective processes are key in the mesoscopic size regime (between nano- and macroscale).
  • Dimensional control is critical for semiconductor electronics and photonics performance.
  • Epitaxial crystal growth enables precise control of material dimensions and properties.

Purpose of the Study:

  • Investigate size-dependent effects in silicon (Si) crystalline surface epitaxial growth.
  • Understand the impact of mesoscopic dimensions on epitaxial growth rates.
  • Explore dopant effects on this size-dependent growth.

Main Methods:

  • Studied epitaxial growth rates of nano- to microscale radial wires and planar stripes.
  • Developed a model explaining size-dependent vapor phase epitaxy behavior.
  • Introduced phosphorus and boron dopants during silicon epitaxy.

Main Results:

  • Demonstrated a strong dependence of epitaxial growth rates on size for Si nano/microstructures.
  • Proposed a model linking size effects to enhanced silane (SiH4) precursor desorption near facet edges.
  • Observed decreased growth rates with dopants, and a critical thickness for single crystalline growth with phosphorus.

Conclusions:

  • Discovered a novel mesoscopic size-dependent growth effect in silicon epitaxy.
  • Identified enhanced surface desorption near facet edges as a key mechanism.
  • This finding enables greater control over advanced device geometries and fabrication.