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Simple technique for evaluating dimensional and compositional changes in selective-area-grown MQW laser diode.

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    Optics Express
    |October 17, 2014
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    A new method using capacitance-voltage (C-V) and current-voltage (I-V) measurements evaluates dimensional and compositional changes in selective-area-grown multiple-quantum-well laser diodes (SAG MQW LDs), correlating shifts with wavelength changes.

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    Area of Science:

    • Semiconductor device physics
    • Optoelectronics
    • Materials science

    Background:

    • Selective-area growth (SAG) is crucial for fabricating advanced semiconductor devices like multiple-quantum-well laser diodes (MQW LDs).
    • Precisely controlling dimensional and compositional variations in SAG MQW LDs is essential for tuning their optical properties, particularly emission wavelength.
    • Existing characterization methods may not fully capture the interplay between structural and compositional changes in complex SAG structures.

    Purpose of the Study:

    • To introduce and validate a novel, combined C-V and I-V measurement technique for assessing dimensional and compositional variations in fully fabricated SAG MQW LDs.
    • To establish a correlation between these variations and the resulting emission wavelength shifts.
    • To demonstrate the technique's effectiveness in extracting growth rate enhancement and bandgap energy.

    Main Methods:

    • Fabrication of a laser diode (LD) array with ten distinct SAG MQW structures.
    • Theoretical and experimental examination of dimensional and compositional effects on wavelength shift.
    • Application of combined C-V and I-V measurements to the fabricated LD array.
    • Comparison of extracted growth parameters and bandgap energies with simulation results derived from photoluminescence (PL) measurements.

    Main Results:

    • A significant wavelength shift of 83 nm was observed for an SAG mask opening width of 100 μm, indicating sensitivity to dimensional changes.
    • A crossover point was identified where both dimensional and compositional changes influence device characteristics.
    • The C-V and I-V measurements successfully extracted growth rate enhancement and bandgap energy, showing good agreement with PL-based simulations.

    Conclusions:

    • The combined C-V and I-V measurement technique provides an effective means to evaluate dimensional and compositional changes in SAG MQW LDs.
    • This method allows for precise correlation of these changes with optical performance, specifically emission wavelength.
    • The validated technique offers a valuable tool for optimizing the design and fabrication of high-performance laser diodes.