Performance enhancement of quantum-dot-sensitized solar cells by potential-induced ionic layer adsorption and...

Successive ionic layer adsorption and reaction (SILAR) technique has been commonly adopted to fabricate quantum-dot-sensitized solar cells (QDSSCs) in the literature. However, pore blocking and poor distribution of quantum dots (QDs) in TiO2 matrices were always encountered. Herein, we report an efficient method, termed as potential-induced ionic layer adsorption and reaction (PILAR), for in situ synthesizing and assembling CdSe QDs into mesoporous TiO2 films. In the ion adsorption stage of this process, a negative bias was applied on the TiO2 film to induce the adsorption of precursor ions. The experimental results show that this bias greatly enhanced the ion adsorption, accumulating a large amount of cadmium ions on the film surface for the following reaction with selenide precursors. Furthermore, this bias also drove cations deep into the bottom region of a TiO2 film. These effects not only resulted in a higher deposited amount of CdSe, but also a more uniform distribution of the QDs along the TiO2 film. By using the PILAR process, as well as the SILAR process to replenish the incorporated CdSe, an energy conversion efficiency of 4.30% can be achieved by the CdSe-sensitized solar cell. This performance is much higher than that of a cell prepared by the traditional SILAR process.