Jove
Visualize
Contact Us

Related Concept Videos

MOS Capacitor01:25

MOS Capacitor

1.8K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.8K
Resting Membrane Potential01:24

Resting Membrane Potential

17.9K
The relative difference in electrical charge, or voltage, between the inside and the outside of a cell membrane, is called the membrane potential. It is generated by differences in permeability of the membrane to various ions and the concentrations of these ions across the membrane.
The Inside of a Neuron is More Negative
The membrane potential of a cell can be measured by inserting a microelectrode into a cell and comparing the charge to a reference electrode in the extracellular fluid. The...
17.9K
Resting Membrane Potential01:24

Resting Membrane Potential

8.8K
8.8K
Potentiometry: Membrane Electrodes01:15

Potentiometry: Membrane Electrodes

2.2K
Membrane electrodes, also known as p-ion electrodes, use membranes that selectively interact with free analyte ions, generating a potential difference across the membrane. The resulting membrane potential, known as the asymmetry potential, is not zero even when analyte concentrations on both sides of the membrane are equal. The membrane's response is typically not selective to a single analyte but proportional to the concentration of all ions in the sample solution capable of interacting at...
2.2K
Non-ohmic Devices00:51

Non-ohmic Devices

1.4K
In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
1.4K
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

1.2K
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
1.2K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Thermal Evaporation of Overlayers Induces Degradation of Metal Halide Perovskites.

ACS nano·2025
Same author

Modulation of Polyether Ether Ketone (PEEK) Surfaces via High-Speed Femtosecond Laser Treatment and Perfluoropolyether-Based Polyurethane Coating.

ACS applied materials & interfaces·2025
Same author

Probing Light-Matter Interactions: Fluorescence Lifetime Manipulation in a Crystalline Colloidal Array.

ACS omega·2024
Same author

Synapse-Mimicking Memristors Based on 3,6-Di(<i>tpy</i>)-9-Phenylcarbazole Unimer and Its Copolymer with Cobalt(II) Ions.

Polymers·2024
Same author

Nanobiosensing with graphene and carbon quantum dots: Recent advances.

Materials today (Kidlington, England)·2023
Same author

LITE-1 mediates behavioral responses to X-rays in <i>Caenorhabditis elegans</i>.

Frontiers in neuroscience·2023
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Experiment Video

Updated: Apr 21, 2026

A Method for Growing Bio-memristors from Slime Mold
07:46

A Method for Growing Bio-memristors from Slime Mold

Published on: November 2, 2017

10.7K

Nonvolatile optically-erased colloidal memristors.

Christopher F Huebner1, Volodymyr Tsyalkovsky, Yuriy Bandera

  • 1Department of Materials Science and Engineering, Center for Optical Materials Science and Engineering Technologies, Clemson University, Clemson, SC 29634-0971, USA. foulger@clemson.edu.

Nanoscale
|October 23, 2014
PubMed
Summary

Researchers developed a novel semiconducting polymer for rewritable flash memory devices. This material, synthesized via mini-emulsion, enables efficient data storage and optical erasure, paving the way for printed electronics.

More Related Videos

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
08:07

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

7.0K
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

3.2K

Related Experiment Videos

Last Updated: Apr 21, 2026

A Method for Growing Bio-memristors from Slime Mold
07:46

A Method for Growing Bio-memristors from Slime Mold

Published on: November 2, 2017

10.7K
Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
08:07

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

7.0K
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

3.2K

Area of Science:

  • Materials Science
  • Polymer Chemistry
  • Organic Electronics

Background:

  • Development of advanced materials for electronic memory is crucial for next-generation devices.
  • Nonvolatile flash memory offers persistent data storage but often requires complex fabrication.
  • Organic semiconductors present opportunities for flexible and low-cost electronic applications.

Purpose of the Study:

  • To synthesize a novel nonconjugated methacrylate terpolymer with specific electron-donating and accepting moieties.
  • To fabricate and characterize a flash memory device utilizing this terpolymer.
  • To explore the potential of semiconducting colloidal inks for printed electronics.

Main Methods:

  • Free radical copolymerization of methacrylate monomers containing carbazole, 1,3,4-oxadiazole, and Coumarin-5 moieties.
  • Mini-emulsion polymerization to form 57 nm polymer particles.
  • Fabrication of a thin-film memory device with indium-tin oxide (ITO) and Aluminum electrodes.

Main Results:

  • The terpolymer film demonstrated nonvolatile flash (rewritable) memory characteristics.
  • The device exhibited accessible electronic states for writing, reading, and optical erasure.
  • A low turn-on voltage of -4.5 VDC and a high current ratio of 10^6 were achieved.
  • Optical erasure was demonstrated using a 360 nm light source.

Conclusions:

  • The synthesized terpolymer functions effectively as a rewritable flash memory material.
  • The device fabrication showcases the potential for continuous processing of semiconducting colloidal inks.
  • This work represents a significant step towards the widespread adoption of 2D manufacturing for printed electronics.