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Updated: Apr 21, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
High-fidelity single-qubit gates for two-electron spin qubits in GaAs
Pascal Cerfontaine1, Tim Botzem1, David P DiVincenzo2
1JARA-Institute for Quantum Information, RWTH Aachen University, D-52074 Aachen, Germany.
Achieving high-fidelity quantum gates for singlet-triplet qubits in GaAs is crucial. This study theoretically demonstrates 99.9% fidelity quantum gates by minimizing decoherence and proposes a tuning protocol for experimental implementation.
Area of Science:
- Quantum computing
- Solid-state quantum information
Background:
- Single-qubit operations on singlet-triplet qubits in GaAs double quantum dots currently lack the fidelity for fault-tolerant quantum information processing.
- Decoherence, particularly high-frequency 1/f-like noise, poses a significant challenge.
Purpose of the Study:
- To theoretically demonstrate the achievability of high-fidelity quantum gates for singlet-triplet qubits.
- To investigate methods for minimizing decoherence effects under experimentally relevant constraints.
- To propose a protocol for experimental gate error elimination.
Main Methods:
- Numerical minimization of decoherence effects using measured noise spectra.
- Theoretical analysis of quantum gate performance in GaAs double quantum dots.
- Development of a self-consistent tuning protocol.
Main Results:
- Theoretical demonstration that quantum gates with fidelities exceeding 99.9% are achievable.
- Effective minimization of decoherence, including 1/f-like noise, is shown to be possible.
- A self-consistent tuning protocol is presented for eliminating systematic gate errors.
Conclusions:
- High-fidelity single-qubit operations ( > 99.9%) are theoretically possible for singlet-triplet qubits in GaAs.
- Minimizing decoherence using measured noise spectra is a viable strategy.
- The proposed tuning protocol offers a pathway for experimental realization and error correction.
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