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Updated: Jun 28, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Coupling a ^{73}Ge Nuclear Spin to an Electrostatically Defined Quantum Dot in Silicon
Paul Steinacker1,2, Gauri Goenka1, Rocky Yue Su1
1University of New South Wales, School of Electrical Engineering and Telecommunications, Sydney, New South Wales 2052, Australia.
Abstract:
Single nuclear spins in silicon are a promising resource for quantum technologies due to their long coherence times and excellent control fidelities. Qubits and qudits have been encoded on donor nuclei, with successful demonstrations of Bell states and quantum memories on the spin-^{1}/_{2} ^{31}P and cat-qubits on the spin-^{7}/_{2} ^{123}Sb nuclei. Isoelectronic nuclear spins coupled to gate-defined quantum dots, such as the naturally occurring ^{29}Si isotope, possess no additional charge and allow for the coupled electron to be shuttled without destroying the nuclear spin coherence. Here, we demonstrate the coupling of a spin-^{9}/_{2} ^{73}Ge nuclear spin to a gate-defined quantum dot in SiMOS via Pauli spin blockade readout using rf reflectometry. We observe the hyperfine interaction (HFI) to the coupled quantum dot electron and are able to tune it from 180 to 350 kHz, through the voltages applied to the lateral gate electrodes. This smaller HFI combined with the faster readout enable easier quantum nondemolition readout of the nuclear spin state. Thus, this work lays the foundation for future spin control experiments on the spin-^{9}/_{2} qudit as well as more advanced experiments such as entanglement distribution between distant nuclear spins or repeated weak measurements.
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