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Related Concept Videos

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
MOSFET01:16

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
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MOSFET Amplifiers01:17

MOSFET Amplifiers

The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
Small-Signal Analysis of MOSFET Amplifiers01:23

Small-Signal Analysis of MOSFET Amplifiers

In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
Controlled-Current Coulometry: Overview01:27

Controlled-Current Coulometry: Overview

Controlled current coulometry, also known as amperostatic coulometry, is a technique used in electrochemical analysis to measure the quantity of a substance through the controlled passage of current. It involves the application of a constant current to an electrochemical cell containing the analyte of interest. As the current flows through the cell, the analyte undergoes a redox reaction at the electrode surface, resulting in a charge transfer. By monitoring the time required for a certain...

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Updated: Jun 26, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

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Published on: August 2, 2019

Scalable Quantum Current Source on Commercial CMOS Process Technology.

Ajit Dash1,2, Suyash Pati Tripathi3, Dimitrios Georgakopoulos4

  • 1School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, NSW 2052, Australia.

Nano Letters
|June 24, 2026
PubMed
Summary
This summary is machine-generated.

Researchers developed a quantum current standard using commercial complementary metal oxide semiconductor (CMOS) technology. This breakthrough enables direct electrical standards, advancing quantum electrical metrology and hardware engineering.

Keywords:
CMOSFDSOIcharge pumpquantum current standardquantum electrical metrologysilicon quantum dots

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Area of Science:

  • Quantum Metrology
  • Solid-State Physics
  • Electrical Engineering

Background:

  • Precise electrical current standards are crucial for technology but are currently indirect, relying on voltage and resistance.
  • Silicon-based charge pumps offer a path to direct electrical standards due to their scalability and compatibility with complementary metal oxide semiconductor (CMOS) fabrication.
  • Previous demonstrations of coherent quantized charge transfer were limited to custom-fabricated nanoscale devices.

Purpose of the Study:

  • To demonstrate the feasibility of using commercially fabricated CMOS devices for a quantum current standard.
  • To bridge the gap between academic research on quantum charge transfer and industrial fabrication.
  • To advance quantum electrical metrology and quantum hardware engineering.

Main Methods:

  • Utilized a commercial 22 nm process node CMOS device for charge pump fabrication.
  • Measured the accuracy of two parallel-connected charge pumps.
  • Employed SI-traceable voltage and resistance standards for calibration in a pumped helium system.

Main Results:

  • Successfully realized a quantum current standard using a commercial CMOS device.
  • Demonstrated the accuracy of the charge pumps against SI-traceable standards.
  • Validated the translation of quantum effect device concepts to an industrial fabrication context.

Conclusions:

  • Commercial CMOS technology can be used to create quantum current standards.
  • This work paves the way for the widespread adoption of quantum electrical standards.
  • Advances in quantum electrical metrology and quantum hardware engineering are facilitated by this industrial-scale approach.