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How good can CVD-grown monolayer graphene be?
Bingyan Chen1, Huixin Huang, Xiaomeng Ma
1Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China. zyzhang@pku.edu.cn lmpeng@pku.edu.cn.
Nanoscale
|November 11, 2014
Summary
Optimized chemical vapor deposition (CVD) graphene achieves high performance comparable to mechanical exfoliated graphene. Electrical measurements under vacuum are crucial for revealing the intrinsic carrier mobility of CVD-grown graphene.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Chemical vapor deposition (CVD) is a key method for graphene production.
- CVD-grown graphene often exhibits lower quality compared to other methods.
- Optimizing CVD processes is essential for commercial applications.
Purpose of the Study:
- To investigate the maximum achievable quality of CVD-derived monolayer graphene.
- To compare the performance of optimized CVD graphene with mechanically exfoliated graphene.
- To understand factors affecting carrier mobility in CVD graphene.
Main Methods:
- Combinational optimization of CVD growth, transfer, device fabrication, and measurement processes.
- Characterization of graphene properties including carrier mobility, electron-hole symmetry, and uniformity.
- Investigation of doping mechanisms and scattering effects.
Main Results:
- Optimized CVD graphene demonstrated performance comparable to mechanically exfoliated graphene.
- High carrier mobility (5000–12,000 cm²/V·s, average ~8800 cm²/V·s) was achieved at room temperature on Si/SiO2.
- Adsorbed oxygen and water molecules cause p-type doping; transferred charges induce impurity scattering.
Conclusions:
- Optimized CVD processes can yield high-quality monolayer graphene suitable for advanced applications.
- Achieving intrinsic carrier mobility requires electrical measurements under vacuum conditions.
- Understanding doping and scattering is critical for maximizing graphene performance.
