Post-Moore two-dimensional integrated electronics for angstrom-nodes

Area of Science:

• Materials Science
• Electrical Engineering
• Nanotechnology

Background:

• Silicon electronics face physical limits and high costs at angstrom-nanometer nodes.
• Two-dimensional (2D) materials present an alternative due to atomic thickness and integration suitability.

Purpose of the Study:

• To systematically review advances in integrated electronics based on 2D materials.
• To highlight challenges and future directions for 2D electronic systems.

Main Methods:

• Overview of wafer-scale synthesis and transfer techniques for 2D semiconductors.
• Discussion of high-performance 2D transistor advancements (gate dielectrics, contacts, scaling).
• Survey of circuit and system-level implementations (logic, memory, 3D integration).

Main Results:

• Progress in wafer-scale synthesis and transfer of 2D materials.
• Development of high-performance 2D transistors with optimized integration.
• Exploration of 2D materials in logic, memory, and 3D monolithic integrated circuits.

Conclusions:

• 2D materials are crucial for extending device scaling beyond silicon's limits.
• Key challenges remain in realizing scalable, manufacturable, and low-power 2D electronic systems.
• Future research should focus on addressing these challenges for angstrom-node electronics.