Two-Dimensional Semiconductors for Postsilicon Electronics: From Transistors to Integrated Circuits

Two-dimensional (2D) semiconductors have emerged as promising channel materials to extend Moore's Law beyond the limitations of silicon, owing to their atomic thickness, dangling-bond-free surfaces, and exceptional electrostatic control. This review systematically examines recent progress and remaining challenges in 2D material-based field-effect transistors (FETs) from device-level engineering to circuit-level integration. It begins by outlining the fundamental physical bottlenecks of silicon technology and the intrinsic advantages of 2D semiconductors. Subsequently, three critical challenges for high-performance 2D transistors are analyzed, including contact resistance, gate dielectric integration, and dimensional scaling, along with experimentally validated interface engineering strategies. The evolution of transistor architectures from planar to FinFET, gate-all-around FET (GAAFET), and complementary FET (CFET) is then reviewed, together with emerging memory device architectures and radiofrequency (RF) transistor designs, highlighting key experimental milestones achieved based on 2D materials. Finally, recent advances in 2D integrated circuits are systematically surveyed, covering logic circuits ranging from basic gates to high-complexity CPUs, high-efficiency sensing-memory-computing circuits realized by planar and three-dimensional (3D) integration, and neuromorphic and brain-inspired computing circuits for energy-efficient artificial intelligence hardware, as well as high-performance RF circuits for next-generation wireless and spaceborne communication systems. The review concludes with an outlook on the remaining roadblocks and future directions for 2D semiconductor-based electronics in the postsilicon era.