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Design, Fabrication, and Experimental Characterization of Plasmonic Photoconductive Terahertz Emitters
Published on: July 8, 2013
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20 THz broadband generation using semi-insulating GaAs interdigitated photoconductive antennas
Optics Express
|November 18, 2014
Summary
We achieved broadband terahertz (THz) generation using large interdigitated antennas on GaAs. This method produces high electric fields and is characterized for various pulse durations and energies.
Area of Science:
- Optoelectronics
- Terahertz (THz) Science and Technology
Background:
- Terahertz (THz) radiation offers unique properties for spectroscopy and imaging.
- Efficient generation of broadband, high-field THz pulses is crucial for advanced applications.
Purpose of the Study:
- To demonstrate broadband (20 THz) terahertz generation with high electric fields.
- To characterize THz generation efficiency based on incident pulse parameters.
- To validate experimental results with numerical simulations.
Main Methods:
- Fabrication of large-area interdigitated antennas on semi-insulating Gallium Arsenide (GaAs).
- Characterization of THz bandwidth as a function of incident pulse duration (15-35 fs) and pump energy (2-30 nJ).
- Broadband spectroscopy of Polytetrafluoroethylene (PTFE).
- Numerical Drude-Lorentz simulations of THz pulse generation.
Main Results:
- Successful broadband (20 THz) terahertz generation was achieved.
- The generated THz pulses exhibit high electric fields.
- Experimental data showed good agreement with Drude-Lorentz simulations.
- Broadband spectroscopy of PTFE was demonstrated using the generated THz pulses.
Conclusions:
- Large-area interdigitated antennas on GaAs are effective for broadband, high-field terahertz generation.
- The generation process is well-described by Drude-Lorentz models.
- This technique shows promise for THz spectroscopy and other applications.
