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Record bandwidth and sub-picosecond pulses from a monolithically integrated mode-locked quantum well ring laser
Optics Express
|November 18, 2014
Summary
We demonstrate a 20 GHz indium phosphide based photonic integrated circuit (PIC) laser. This semiconductor ring laser achieves a record 11.5 nm optical comb bandwidth and generates sub-picosecond pulses.
Area of Science:
- Photonics
- Semiconductor Lasers
- Integrated Optics
Background:
- Mode-locked lasers are crucial for various applications requiring high-speed optical pulses.
- Indium phosphide (InP) based photonic integrated circuits (PICs) offer a robust platform for advanced laser functionalities.
Purpose of the Study:
- To present the detailed characterization of a novel semiconductor ring passively mode-locked laser.
- To explore the laser's dynamical regimes and performance under varying operating conditions.
Main Methods:
- Fabrication of a 20 GHz repetition rate semiconductor ring laser on an InP platform.
- Comprehensive characterization in both spectral and time domains.
- Analysis of different dynamical regimes based on operating parameters.
Main Results:
- Demonstration of a 20 GHz repetition rate passively mode-locked laser.
- Achieved a record optical coherent comb bandwidth of 11.5 nm (at 3 dB) from a quantum well device.
- Successful generation of sub-picosecond optical pulses.
Conclusions:
- The InP-based PIC laser exhibits excellent performance for generating broadband optical combs.
- The device demonstrates potential for applications requiring high repetition rate and ultrashort pulse generation.

